The goal of my research is to qualify SiGe HBT technology for cryogenic applications. This can be broken down into four directions.
- Characterization: DC characterization of SiGe HBTs down to 70 mK; RF characterization down to 4.2 K
- Device Physics: Collector transport mechanism of SiGe HBTs at cryogenic temperature
- Compact Modeling: HiCUM modeling of SiGe HBTs at cryogenic temperatures
- Circuit Design: cryogenic transimpedance amplifier for single-electron transistor (SET) readout, cryogenic low-noise amplifier