Conference:

  1. H. Ying, J. W. Teng, G. N. Tzintzarov, A. P. Omprakash, S. G. Rao, U. S. Raghunathan, A. Ildefonso, M. S. Fernandez, and J. D. Cressler, “DC and RF Variability of SiGe HBTs Operating Down to Deep Cryogenic Temperatures,” Proceedings of 2019 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019.
  2. B. R. Wier, R. P. Martinez, U. S. Raghunathan, H. Ying, S. Zeinolabedinzadeh and J. D. Cressler, “Revisiting Safe Operating Area: SiGe HBT Aging Models for Reliability-Aware Circuit Design,” Proceedings of 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), San Diego, CA, 2018, pp. 215-218.
  3. U. S. Raghunathan, B. Wier, R. P. Martinez, Z. E Fleetwood, A. Omprakash, H. Ying, S. Zeinolabedinzadeh, J. D. Cressler, “Modeling of High-Current Damage in SiGe HBTs Under Pulsed Stress,” Proceedings of 2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), pp. 17-20, Nov. 2016
  4. A. P. Omprakash, P. S. Chakraborty, H. Ying, A. S. Cardoso, A. Ildefonso, and J. D. Cressler, “On the Potential of Using SiGe HBTs on SOI to Support Emerging Applications up to 300°C," Proceedings of 2015 IEEE Bipolar / BiCMOS Circuits and Technology Meeting (BCTM), Oct. 2015

Journal:

  1. Z. Wang, H. Ying, W. Chern, S. Yu, M. Mourigal, J. D. Cressler and A. I. Khan. "Cryogenic characterization of a ferroelectric field-effect-transistor." Applied Physics Letters 116, no. 4 (2020): 042902.
  2. Y. Gong, S. Lee, H. Ying, A. P. Omprakash, E. Gebara, H. Gu, C. Nicholls, and J. D. Cressler. "A Broadband Logarithmic Power Detector Using 130 nm SiGe BiCMOS Technology." In 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), pp. 1-4. IEEE, 2019.
  3. J. Dark, H. Ying, G. Nunn, J. D. Cressler, and D. Davidović. “Increasing the signal-to-noise ratio of magnetic tunnel junctions by cryogenic preamplification,” Journal of Applied Physics 125, no. 16 (2019): 163902.
  4. I. Song, A. S. Cardoso, H. Ying, M. Cho and J. D. Cressler, “Cryogenic Characterization of RF Low-Noise Amplifiers Utilizing Inverse-Mode SiGe HBTs for Extreme Environment Applications,” in IEEE Transactions on Device and Materials Reliability, vol. 18, no. 4, pp. 613-619, Dec. 2018.
  5. H. Ying, J. Dark, A. P. Omprakash, B. R. Wier, L. Ge, U. Raghunathan, N. E. Lourenco, Z. E. Fleetwood, M. Mourigal, D. Davidovic, and J. D. Cressler, “Collector Transport in SiGe HBTs Operating at Cryogenic Temperatures,” in IEEE Transactions on Electron Devices, vol. 65, no. 9, pp. 3697-3703, Sept. 2018.
  6. U. S. Raghunathan, R. P. Martinez, B. R. Wier, A. P. Omprakash, H. Ying, T. G. Bantu, H. Yasuda, P. Menz, J. D. Cressler, “Hot-Carrier-Damage-Induced Current Gain Enhancement (CGE) Effects in SiGe HBTs,” in IEEE Transactions on Electron Devices., 2018
  7. D. Davidović, H. Ying, J. Dark, B. R. Wier, L. Ge, N. E. Lourenco, A. P. Omprakash, M. Mourigal, and J. D. Cressler. “Tunneling, Current Gain, and Transconductance in Silicon-Germanium Heterojunction Bipolar Transistors Operating at Millikelvin Temperatures.” Physical Review Applied, vol. 8, no. 2, 2017
  8. A. P. Omprakash, H. Dao, U. S. Raghunathan, H. Ying, P. S. Chakraborty, J. A. Babcock, R. Mukhopadhyay, J. D. Cressler, “An Investigation of High-Temperature (to 300 °C) Safe-Operating-Area in a High-Voltage Complementary SiGe on SOI Technology,” in IEEE Transactions on Electron Devices, vol. 64, no. 9, pp. 3748-3755, Sept. 2017.
  9. H. Ying, B. R. Wier, J. Dark, N. E. Lourenco, L. Ge, A. P Omprakash, M. Mourigal, D. Davidovic, J. D. Cressler, “Operation of SiGe HBTs Down to 70 mK,” in IEEE Electron Device Letters, vol. 38, no. 1, pp. 12-15, Jan. 2017
  10. U. S. Raghunathan, H. Ying, B. R. Wier, A. P. Omprakash, P. S. Chakraborty, T. G. Bantu, H. Yasuda, P. Menz, J. D. Cressler, “Physical Differences in Hot Carrier Degradation of Oxide Interfaces in Complementary (n-p-n+p-n-p) SiGe HBTs,” in IEEE Transactions on Electron Devices, vol. 64, no. 1, pp. 37-44, Jan. 2017
  11. S. Zeinolabedinzadeh, A. C. Ulusoy, F. Inanlou, H. Ying, Y. Gong, Z. Fleetwood, N. Roche, A. Khachatrian, D. McMorrow, S. Buchner, J. Warner, P. Paki, J. D. Cressler, “Single-Event Effects in a Millimeter-Wave Receiver Front-End Implemented in 90nm, 300 GHz SiGe HBT Technology,” in IEEE Transactions on Nuclear Science, Dec. 2016
  12. S. Zeinolabedinzadeh, H. Ying, Z. E. Fleetwood, N. J. H. Roche, A. Khachatrian, D. McMorrow, S. P. Buchner, J. H. Warner, P. Paki, J. D. Cressler, “Single-Event Effects in High-Frequency Linear Amplifiers: Experiment and Analysis,” in IEEE Transactions on Nuclear Science, Nov. 2016
  13. R. Chai, H. Ying, and Y. Zhang, “Supercapacitor Charge Redistribution Analysis for Power Management of Wireless Sensor Networks,” IET Power Electronics, Sept. 2016